Title :
Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication
Author :
Taleb, Fadia ; Levallois, C. ; Paranthoen, C. ; Chevalier, N. ; De Sagazan, Olivier ; Letoublon, A. ; Durand, O.
Author_Institution :
France INSA, Univ. Eur. de Bretagne, Rennes, France
Abstract :
We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties. Preliminary results are presented on the realization of light emitting diodes.
Keywords :
III-V semiconductors; copper; electroplating; indium compounds; integrated circuit bonding; laser cavity resonators; light emitting diodes; semiconductor lasers; surface emitting lasers; three-dimensional integrated circuits; InP based vertical cavity surface emitting lasers; InP-Cu-Si; VCSEL fabrication; device thermal properties; electroplated copper through silicon vias; light emitting diodes; mechanical bonding; stress; substrate bonding; Bonding; Copper; Indium phosphide; Silicon; Stress; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880543
