A low-resistance spiking-free n-type ohmic contact for InP membrane devices

Author

Longfei Shen ; Yuqing Jiao ; Augstin, Luc ; Sander, Kitty ; van der Tol, Jos ; Ambrosius, Huub ; Roelkens, Gunther ; Smit, Meint

Author_Institution

COBRA Res. Inst., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Au spiking is a long-standing problem for Ni/Ge/Au ohmic contacts on n-InP. This becomes more critical when the contacts are deposited on top of thin membrane devices. In order to reduce the spiking while maintaining a low resistance, we present a new approach which reduces the amount of Au in these contacts. A low specific contact resistance of 7×10^-7 Ωcm² is obtained after a 15 s annealing at 400 °C. Afterwards the contacts can be thickened with an extra deposition of metals. Scanning electron microscope pictures show abrupt and uniform interfaces between metals and semiconductors.

Keywords

III-V semiconductors; annealing; contact resistance; elemental semiconductors; germanium; gold; indium compounds; membranes; nickel; ohmic contacts; scanning electron microscopy; semiconductor devices; semiconductor-metal boundaries; annealing; contact resistance; low-resistance spiking-free n-type ohmic contact; metal-semiconductor interfaces; scanning electron microscopy; temperature 400 degC; thin membrane devices; time 15 s; Annealing; Contact resistance; Gold; Indium phosphide; Nickel; Ohmic contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880544

Filename

6880544