Title :
Electrical injection in GaP-based laser waveguides and active areas
Author :
Gauthier, Jean-Paul ; Robert, C. ; Almosni, S. ; Cornet, C. ; Leger, Y. ; Perrin, M. ; Letoublon, A. ; Levallois, C. ; Paranthoen, C. ; Burin, Jean-Philippe ; Even, J. ; Rohel, T. ; Tavernier, Karine ; Lepouliquen, Julie ; Carrere, H. ; Balocchi, A. ; Mar
Author_Institution :
INSA, Univ. Eur. de Bretagne, Rennes, France
Abstract :
This paper presents the recent advances in device engineering towards the fabrication of an electrically pumped laser on GaP substrate for photonic integration on silicon. The letter first presents the electrical properties of a GaP-based PIN diode, in particular the reduction of the characteristic resistance of the p-contact, thanks to a judicious combination of metal choice and thermal annealing. Secondly, carrier injection in the active area is investigated by use of time-resolved photoluminescence, regarding particularly the nature and composition of the barrier and quantum wells materials, with a focus on the nitrogen incorporation issues.
Keywords :
III-V semiconductors; annealing; gallium compounds; integrated optics; optical fabrication; optical materials; optical pumping; p-i-n diodes; photoluminescence; quantum well lasers; silicon; waveguide lasers; GaP; GaP substrate; GaP-based PIN diode; GaP-based laser waveguides; Si; active areas; barrier composition; carrier injection; characteristic resistance; device engineering; electrical injection; electrical properties; electrically pumped laser fabrication; nitrogen incorporation; p-contact; photonic integration; quantum well materials; thermal annealing; time-resolved photoluminescence; Metals; Nitrogen; Photoluminescence; Semiconductor lasers; Silicon; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880545
