Low temperature direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment

Author

Kewei Gong ; Changzheng Sun ; Bing Xiong ; Yi Luo

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol., China

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

We report a novel method for direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment, which requires only a low annealing temperature of 320°C. Scanning acoustic microscope (SAM) measurements show that the proposed treatment helps form a firm bond between the wafer pair. The bonding strength is measured with a destructive approach, and the bonding interface is evaluated by scanning electron microscope (SEM).

Keywords

III-V semiconductors; acoustic microscopy; annealing; elemental semiconductors; hydrophilicity; hydrophobicity; indium compounds; scanning electron microscopy; silicon; silicon-on-insulator; wafer bonding; InP-Si; SEM; annealing temperature; bonding interface; bonding strength; destructive approach; firm bond; hydrophilic-hydrophobic treatment; low temperature direct InP-SOI wafer bonding; scanning acoustic microscope measurements; scanning electron microscope; temperature 320 degC; wafer pair; Annealing; Bonding; Indium phosphide; Scanning electron microscopy; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880548

Filename

6880548