Title :
Surface orientation depdendence of electro-optic effects in InGaAsP for lateral PIN-junction InGaAsP photonic-wire modulators
Author :
Ikku, Yuki ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
Electro-optic effects on InGaAsP(001), (110) and (111) have been numerically analyzed for an InGaAsP photonic-wire optical modulator with a lateral PIN-junction. We have presented that largest refractive index change can be obtained using InGaAsP(110) when TE polarized light propagates parallel to [111] direction. The amount of index change is approximately 15 % larger than that of InGaAsP(001) where electric field is vertically applied. Effects of carrier depletion have also been calculated and found carrier depletion can enhance the index change several times.
Keywords :
III-V semiconductors; electro-optical effects; electro-optical modulation; indium compounds; optical materials; refractive index; InGaAsP; TE polarized light; carrier depletion; electric field; electro-optic effect; index change amount; lateral PIN-junction InGaAsP photonic-wire modulators; refractive index change; surface orientation dependence; Electric fields; Electrooptic effects; Electrooptical waveguides; Indexes; Modulation; Photonics;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880549
