Title :
High quality quantum-well intermixing for InP-based membrane photonic integration on Si
Author :
Jieun Lee ; Doi, Kohei ; Hiratani, Takuo ; Inoue, Daisuke ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Denartment of Electr. & Electron. Enzineerina, J. Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
To realize membrane photonic integrated circuits, a novel quantum-well-intermixing (QWI) process using dual SiO2 films (O2-sputtered layer for enhancement of QWI and plasma-deposited layer for surface protection) was investigated. By optimization of the protection layer thickness, a large bandgap wavelength shift difference of 95 nm (57 meV) as well as good photoluminescence (PL) properties (no degradations in the PL spectral width and the intensity) was obtained. Moreover, the transient region length was estimated to be less than 3 μm which is the resolution limit of our PL measurement setup.
Keywords :
elemental semiconductors; energy gap; integrated optics; membranes; photoluminescence; semiconductor quantum wells; silicon; silicon compounds; InP; InP-based membrane photonic integration; Si-SiO2; bandgap wavelength shift difference; dual silica films; high quality quantum-well intermixing; membrane photonic integrated circuits; photoluminescence measurement setup; protection layer thickness optimization; resolution limit; transient region length; Indium phosphide; Optical waveguides; Photonic band gap; Photonics; Transient analysis; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880550
