Title :
Low-power and high-speed operation capabilities of semiconductor membrane lasers — Energy cost limited by Joule heat
Author :
Hiratani, Takuo ; Doi, Kohei ; Atsuji, Yuki ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
The power consumption of a lateral current injection (LCI) type membrane distributed reflector (DR) laser under a high-speed direct modulation was theoretically investigated. As the results, we found that there is an optimal cavity length, which can be determined by the series resistance, to minimize the power consumption. For an example., an energy cost of 37 fJ/bit can be obtained at a modulation speed of 10 Gb/s for the cavity length of 17 μm when the grating coupling coefficient of 1800 cm-1 and the resistivity of p-InP cladding layer of 0.035 Ω·cm are used.
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; indium compounds; laser beams; laser cavity resonators; optical communication equipment; optical modulation; semiconductor lasers; InP; Joule heat; bit rate 10 Gbit/s; energy cost; grating coupling coefficient; high-speed direct modulation; high-speed operation capability; lateral current injection type membrane distributed reflector laser; low-power operation capability; modulation speed; optimal cavity length; p-InP cladding layer resistivity; power consumption; resistivity 0.035 ohmcm; semiconductor membrane lasers; series resistance; size 17 mum; Cavity resonators; Power demand; Power lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880551
