DocumentCode :
1785783
Title :
Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
Author :
Jiongjiong Mo ; Lind, Erik ; Wernersson, Lars-Erik
Author_Institution :
Electr. & Inf. Technol., Lund Univ., Lund, Sweden
fYear :
2014
fDate :
11-15 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
Asymmetric In0.53Ga0.47As MOSFETs with different regrown contacts at source (In0.53Ga0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain gm/gd has been obtained with reduced output conductance gd and improved break-down voltage Vbd. For Lg=100nm, a high oscillation frequency fmax=270GHz has been obtained using an InP drain.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; millimetre wave field effect transistors; semiconductor device breakdown; semiconductor growth; InGaAs; InP; asymmetric MOSFETs; drain electrode; frequency 270 GHz; improved breakdown voltage; reduced output conductance; regrown contacts; size 100 nm; wider bandgap material; Electrodes; Impact ionization; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
Type :
conf
DOI :
10.1109/ICIPRM.2014.6880553
Filename :
6880553
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1785783
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