Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires

Author

Anufriev, Roman ; Chauvin, Nicolas ; Barakat, Jean-Baptiste ; Khmissi, Hammadi ; Naji, Khalid ; Patriarche, G. ; Letartre, Xavier ; Gendry, Michel ; Bru-Chevallier, Catherine

Author_Institution

Inst. des Nanotechnol. de Lyon (INL), Univ. de Lyon, Villeurbanne, France

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.

Keywords

III-V semiconductors; indium compounds; light polarisation; molecular beam epitaxial growth; nanofabrication; nanowires; photoluminescence; piezoelectric semiconductors; piezoelectricity; semiconductor growth; semiconductor quantum wires; spectral line breadth; InAs-InP; Si; VLS assisted molecular beam epitaxy; asymmetric lineshape; linearly polarized emission; microphotoluminescence; photoluminescence polarization; piezoelectric properties; silicon substrates; temperature 10 K; wavelength 1.55 mum; wurtzite quantum rod nanowires; Anisotropic magnetoresistance; Electric fields; Indium phosphide; Nanowires; Photonics; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880556

Filename

6880556