Title :
InP nanowire lasers epitaxially grown on (001) silicon ‘V-groove’ templates
Author :
Bin Tian ; Zhechao Wang ; Pantouvaki, M. ; Weiming Guo ; Van Campenhout, J. ; Clement, M. ; Van Thourhout, Dries
Author_Institution :
INTEC Dept., Ghent Univ., Ghent, Belgium
Abstract :
We demonstrate an ultra-low threshold nanowire laser monolithically integrated on a (001) silicon substrate. By using a V-groove template we were able to reduce the laser threshold by one order of magnitude (0.19pJ per pulse) compared with our earlier devices and dramatically increased the yield throughout the wafer.
Keywords :
III-V semiconductors; indium compounds; integrated optics; nanophotonics; nanowires; semiconductor lasers; (001) silicon V-groove templates; (001) silicon substrate; InP; Si; laser threshold; monolithic integration; ultralow threshold nanowire laser; Epitaxial growth; Indium phosphide; Laser excitation; Pump lasers; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880557
