80Gb/s multi-level BPSK experiment with an InP-monolithic source based on prefixed optical phase switching

Author

Kazmierski, C. ; Chimot, N. ; Jorge, Filipe ; Konczykowska, Agnieszka ; Blache, F. ; Decobert, Jean ; Alexandre, F. ; Garreau, A. ; da Silva, Rodrigo

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Improved-speed full-monolithic BPSK transmitter based on prefixed phase switching by fast Electro-Absorption Modulators has been realized on InP using a Selective Area Growth integrating circuit technology. It has been used in 80Gb/s multi-level BPSK format modulation experiments. Simplicity, speed scalability, ultra-small footprint and low power drive of the monolithic circuit are attractive for advanced format migration towards low-cost applications.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; integrated optoelectronics; light sources; optical switches; optical transmitters; InP; bit rate 80 Gbit/s; fast electro-absorption modulators; full-monolithic BPSK transmitter; indium phosphide-monolithic source; multilevel BPSK format modulation experiments; prefixed optical phase switching; selective area growth integrating circuit technology; Binary phase shift keying; Indium phosphide; Integrated optics; Optical interferometry; Optical switches; Optical transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880558

Filename

6880558