Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices

Author

Matsumoto, Akiyoshi ; Takei, Y. ; Matsushita, Akira ; Akahane, Kouichi ; Matsushima, Y. ; Utaka, K.

Author_Institution

Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; optical logic; quantum dot lasers; semiconductor optical amplifiers; 20-layer-stacked InAs quantum dot structure; InAs; MBE; QD-SOA; TE mode; autocorrelation waveforms; device length; femtosecond optical pulse response; fundamental gain characteristics; gain 34.7 dB; maximum gain; size 1650 mum; slight pulse broadening; strain-compensation technique; time 55 fs; ultrafast all-optical logic gate devices; ultrafast optical pulse response; wavelength 1550 nm; Gain; Logic gates; Optical device fabrication; Optical pulses; Optical reflection; Optical waveguides; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880561

Filename

6880561