Title :
High-current-gain InP DHBTs with a passivation ledge demonstrating ft and fmax of over 440 GHz
Author :
Kashio, Norihide ; Kurishima, Kenji ; Ida, Minoru ; Matsuzaki, Hideaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
This paper reports current gain and high-frequency characteristics of InP DHBTs with a passivation ledge and various emitter sizes. With the passivation ledge, current gain of over 40 is maintained even for a 0.25-μm-emitter HBT. The ft is over 420 GHz for HBTs with emitters ranging from 0.25 to 0.5 μm. On the other hand, the fmax greatly increases from 320 to 440 GHz with decreasing emitter width from 0.5 to 0.25 μm. These results indicate that the 0.25-μm-emitter HBT exhibits balanced high-frequency performance (ft= 449 GHz and fmax= 440 GHz) while maintaining a current gain of over 40.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; passivation; submillimetre wave transistors; DHBT; InP; current gain; frequency 320 GHz; frequency 440 GHz; frequency 449 GHz; passivation ledge; size 0.25 mum to 0.5 mum; Double heterojunction bipolar transistors; Gain; Indium gallium arsenide; Indium phosphide; Passivation; Silicon compounds;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880564
