• DocumentCode
    1785809
  • Title

    Thin body GaSb-OI P-mosfets on Si wafers fabricated by direct wafer bonding

  • Author

    Nishi, Kentaro ; Yokoyama, Masafumi ; Yokoyama, Haruki ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    11-15 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have demonstrated the operation of thin body GaSb-on-insulator (GaSb-OI) p-MOSFETs on Si wafers fabricated by direct wafer boding (DWB). We have developed a wafer-scale transfer technique for transferring ultrathin GaSb layers to Si wafers. We have found that the hole mobility of the thin body GaSb-OI p-MOSFETs depends on the GaSb thickness and the GaSb channel surface condition.
  • Keywords
    III-V semiconductors; MOSFET; etching; gallium compounds; hole mobility; silicon; wafer bonding; DWB; GaSb:Si; channel surface; direct wafer bonding; hole mobility; thin body GaSb-on-insulator p-MOSFET; wafer-scale transfer; Aluminum oxide; Fabrication; Logic gates; MOSFET circuits; Nickel; Silicon; Surface treatment; GaSb; MOSFET; on-insulator; wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 26th International Conference on
  • Conference_Location
    Montpellier
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2014.6880566
  • Filename
    6880566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1785809