Title :
Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si
Author :
Pantzas, K. ; Itawi, A. ; Couraud, L. ; Esnault, Jean-Claude ; Le Bourhis, Eric ; Patriarche, G. ; Beaudoin, G. ; Sagnes, I. ; Streque, Jeremy ; Talneau, A.
Author_Institution :
Lab. de Photonique et de Nanostruct., UPR, Marcoussis, France
Abstract :
A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.
Keywords :
III-V semiconductors; bonding processes; elemental semiconductors; indium compounds; membranes; semiconductor growth; semiconductor heterojunctions; silicon; InP membranes; InP-Si; band alignment; direct oxide-free bonding; electrical transport; heterointerface; hybrid material system; n-InP/n-Si isotype heterojunction; Bonding; Heterojunctions; Indium phosphide; Schottky diodes; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880572
