Title :
Highly reliable InP-based PIN-photodiode array monolithically integrated with 90° hybrid MMI using butt-joint regrowth
Author :
Yagi, Hideki ; Kikuchi, Takashi ; Inoue, Naoko ; Masuyama, Ryuji ; Katsuyama, Tomokazu ; Uesaka, Katsumi ; Yoneda, Yoshihiro ; Shoji, Hajime
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama, Japan
Abstract :
Highly reliable InP-based pin-photodiode arrays monolithically integrated with a 90° hybrid consisting of MMI using the butt-joint regrowth were demonstrated for 100 Gb/s coherent receivers. Responsivity imbalance of all channels was less than ±0.5 dB owing to the phase adjustment of waveguides between MMIs. The wide 3-dB bandwidth of 26 GHz was obtained at a low bias voltage of -1.6 V. The dark current (bias: -3.0 V) was as low as 0.2 nA by optimizing the thickness of InP passivation, and the stable dark current was achieved in the accelerated aging test (-5 V at 175 °C) over 2,000 h.
Keywords :
III-V semiconductors; dark conductivity; indium compounds; integrated optoelectronics; life testing; monolithic integrated circuits; p-i-n photodiodes; passivation; InP; InP passivation thickness; accelerated aging test; bandwidth 26 GHz; bias voltage; butt-joint regrowth; channel responsivity imbalance; coherent receivers; current 0.2 nA; highly reliable InP-based PIN-photodiode array; hybrid MMI; monolithic integration; multimode interference; stable dark current; temperature 175 degC; time 2000 h; voltage -1.6 V; voltage -3 V; voltage -5 V; waveguide phase adjustment; Arrays; Couplings; Dark current; Indium phosphide; Optical waveguides; Photodiodes; Receivers;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880574
