Title :
Waveguide InGaAs photodetector with schottky barrier enhancement layer on III-V CMOS photonics platform
Author :
Yongpeng Cheng ; Ikku, Yuki ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/InAlAs layers, the dark current is successfully reduced to 7nA at 1V bias.
Keywords :
CMOS integrated circuits; III-V semiconductors; MMIC; Schottky barriers; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; III-V CMOS photonics; InGaAs-InP-InAlAs; Schottky barrier enhancement layer; dark current; metal-semiconductor-metal; monolithic integration; photonic wire waveguide integration; voltage 1 V; waveguide photodetector; CMOS integrated circuits; Dark current; Indium gallium arsenide; Indium phosphide; Optical waveguides; Photonics; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880578
