Title :
Ion implanted In0.53Ga0.47As for ultrafast saturable absorber device at 1.55 μm
Author :
Li Fang ; Bachelet, Cyril ; Sagnes, I. ; Beaudoin, G. ; Oudar, Jean-Louis
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis, France
Abstract :
Iron (Fe) ion implantation with post-annealing was used to shorten the carrier lifetime of In0.53Ga0.47As-based saturable absorber due to an effective Fe3+/Fe2+ trap level. The modulation depth and the nonsaturable loss were investigated. Moreover, we found that the saturation of Fe-related trap level at high excited carrier density can be avoided by introducing Zn dopant in InGaAs. Furthermore, by comparing As and Fe-implanted InGaAs samples, we found that Fe2+/Fe3+ is more effective as a trap center for electrons and holes, while ionized As is a trap center only for electrons in InGaAs.
Keywords :
III-V semiconductors; annealing; carrier lifetime; electron density; gallium arsenide; high-speed optical techniques; indium compounds; ion implantation; iron; optical losses; optical modulation; optical saturable absorption; radiation pressure; zinc; In0.53Ga0.47As; Zn; carrier lifetime; electron trap center; high-excited carrier density; hole trap center; iron ion implantation; modulation depth; nonsaturable loss; post-annealing; ultrafast saturable absorber device; wavelength 1.55 mum; zinc dopant; Annealing; Charge carrier lifetime; Indium gallium arsenide; Indium phosphide; Iron; Modulation; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880581
