Title :
Direct bonding of YIG film on Si without intermediate layer
Author :
Pantzas, K. ; Patriarche, G. ; Talneau, A. ; Ben Youssef, J.
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis, France
Abstract :
Direct bonding of Yttrium Iron Garnet on Si without any intermediate layer is demonstrated and characterized using Scanning Transmission Electron Microscopy. Such geometry of the hybrid stack with no layer in between the magneto-optic garnet film and the Si guiding layer opens the route for highly efficient hybrid isolators.
Keywords :
bonding processes; elemental semiconductors; garnets; scanning-transmission electron microscopy; silicon; yttrium compounds; STEM; Si guiding layer; Si-YIG; direct bonding; highly efficient hybrid isolators; hybrid stack geometry; magnetooptic garnet film; scanning transmission electron microscopy; yttrium iron garnet film; Bonding; Garnets; Optical films; Optical surface waves; Optical waveguides; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880583
