• DocumentCode
    1785840
  • Title

    Direct bonding of YIG film on Si without intermediate layer

  • Author

    Pantzas, K. ; Patriarche, G. ; Talneau, A. ; Ben Youssef, J.

  • Author_Institution
    Lab. de Photonique et de Nanostruct., Marcoussis, France
  • fYear
    2014
  • fDate
    11-15 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Direct bonding of Yttrium Iron Garnet on Si without any intermediate layer is demonstrated and characterized using Scanning Transmission Electron Microscopy. Such geometry of the hybrid stack with no layer in between the magneto-optic garnet film and the Si guiding layer opens the route for highly efficient hybrid isolators.
  • Keywords
    bonding processes; elemental semiconductors; garnets; scanning-transmission electron microscopy; silicon; yttrium compounds; STEM; Si guiding layer; Si-YIG; direct bonding; highly efficient hybrid isolators; hybrid stack geometry; magnetooptic garnet film; scanning transmission electron microscopy; yttrium iron garnet film; Bonding; Garnets; Optical films; Optical surface waves; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 26th International Conference on
  • Conference_Location
    Montpellier
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2014.6880583
  • Filename
    6880583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1785840