Title :
Low-threshold-current operation of lateral current injection membrane distributed-feedback laser bonded on Si
Author :
Atsuji, Yuki ; Doi, Kohei ; Lee, Jeyull ; Atsumi, Yuki ; Hiratani, Takuo ; Inoue, Daisuke ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Toward realization of an ultralow-power-consumption semiconductor light source for on-chip optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane DFB laser with 158 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 390 μA for the cavity length of 360 μm and the stripe width of 0.2 μm, which is lowest value ever reported in a DFB lasers on a Si substrate.
Keywords :
distributed feedback lasers; laser beams; laser cavity resonators; light sources; optical interconnections; semiconductor lasers; silicon; Si; Si substrate; cavity length; core thickness; current 390 muA; lateral current injection membrane distributed-feedback laser; low-threshold-current operation; membrane DFB laser; on-chip optical interconnection; room-temperature continuous-wave operation; size 0.2 mum; size 158 nm; size 360 mum; stripe width; temperature 293 K to 298 K; threshold current; ultralow-power-consumption semiconductor light source; Cavity resonators; Distributed feedback devices; Indium phosphide; Substrates; Surface emitting lasers; Threshold current; DFB laser; EB lithography; lateral current injection; membrane laser; optical interconnects; strong optical confinement;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880584
