Title :
Monolithic InGaAs-on-Si micro-disk ensemble LED with peak luminescence at 1.58 μm
Author :
Kjellman, Jon Oyvind ; Tanemura, Takuo ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
Abstract :
Ensembles of p-i-n InGaAs micro-discs, grown by micro selective-area metalorganic chemical vapor deposition are fabricated into LED structures. These structures exhibit electroluminescence with spectral peaks at 1580 nm, a sharp roll-off at 1590 nm and a full-width half-maximum in excess of 90 nm depending on injection current. This spectrum covers the entire C-band and establishes monolithic InGaAs-on-Si as a potential candidate for filling the need for on-silicon light-sources.
Keywords :
III-V semiconductors; MOCVD; electroluminescence; elemental semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; light sources; p-i-n diodes; silicon; InGaAs-Si; electroluminescence; injection current; microselective-area metalorganic chemical vapor deposition; monolithic InGaAs-onSi microdisk ensemble LED; on-silicon light sources; p-i-n microdiscs; wavelength 1580 nm; wavelength 1590 nm; Electroluminescence; Indium gallium arsenide; Indium phosphide; Photonic band gap; Silicon; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880586
