Title :
Transmission line signal and noise modeling of millimeter wave CMOS transistor and application to LNA design
Author :
Seifi, Z. ; Abdipour, A. ; Mirzavand, R.
Author_Institution :
E.E. Dept., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
In this paper, an accurate and computationally efficient model for millimeter wave frequency signal and noise performance of MOSFETs is proposed. This model is based on the transmission-line and distributed behavior of the transistor along the electrodes width. The model is verified by comparing with the conventional lumped model. Furthermore, the proposed model is used to design a CMOS LNA operating at frequency range of 35-40 GHz.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit modelling; integrated circuit noise; low noise amplifiers; millimetre wave transistors; CMOS LNA; LNA design; MOSFET; frequency 35 GHz to 40 GHz; millimeter wave CMOS transistor; millimeter wave frequency signal; noise modeling; transmission line signal; CMOS integrated circuits; Computational modeling; MOSFET; Noise; Power transmission lines; Semiconductor device modeling; CMOS technology; LNA; MOSFET; Transmission Line Model; transit frequency;
Conference_Titel :
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location :
Tehran
DOI :
10.1109/IranianCEE.2014.6999779
