DocumentCode
1785929
Title
Transmission line signal and noise modeling of millimeter wave CMOS transistor and application to LNA design
Author
Seifi, Z. ; Abdipour, A. ; Mirzavand, R.
Author_Institution
E.E. Dept., Amirkabir Univ. of Technol., Tehran, Iran
fYear
2014
fDate
20-22 May 2014
Firstpage
1537
Lastpage
1540
Abstract
In this paper, an accurate and computationally efficient model for millimeter wave frequency signal and noise performance of MOSFETs is proposed. This model is based on the transmission-line and distributed behavior of the transistor along the electrodes width. The model is verified by comparing with the conventional lumped model. Furthermore, the proposed model is used to design a CMOS LNA operating at frequency range of 35-40 GHz.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit modelling; integrated circuit noise; low noise amplifiers; millimetre wave transistors; CMOS LNA; LNA design; MOSFET; frequency 35 GHz to 40 GHz; millimeter wave CMOS transistor; millimeter wave frequency signal; noise modeling; transmission line signal; CMOS integrated circuits; Computational modeling; MOSFET; Noise; Power transmission lines; Semiconductor device modeling; CMOS technology; LNA; MOSFET; Transmission Line Model; transit frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location
Tehran
Type
conf
DOI
10.1109/IranianCEE.2014.6999779
Filename
6999779
Link To Document