DocumentCode :
1786135
Title :
Defects study in IR SWIR HgCdTe photodetectors using DLTS
Author :
Brunner, A. ; Rubaldo, L. ; Berthoz, J. ; Bauza, D. ; Reimbold, Gilles
Author_Institution :
SOFRADIR, Châtenay-Malabry, France
fYear :
2014
fDate :
7-9 July 2014
Firstpage :
9
Lastpage :
11
Abstract :
The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.
Keywords :
II-VI semiconductors; data recording; deep level transient spectroscopy; hole traps; infrared detectors; mercury compounds; photodetectors; DLTS; HgCdTe; IR SWIR photodetector; dark current; data recording; electron volt energy 0.19 eV; hole trap; Cadmium; Capacitance; Dark current; Photodetectors; Tellurium; Temperature distribution; Transient analysis; DLTS; Defects; HgCdTe; IR photodetector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Electronics (WOLTE), 2014 11th International Workshop on
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/WOLTE.2014.6881013
Filename :
6881013
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1786135
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