Title :
Low temperature characterization of 14nm FDSOI CMOS devices
Author :
Shin, M. ; Shi, Miaojing ; Mouis, M. ; Cros, A. ; Josse, E. ; Kim, G.T. ; Ghibaudo, Gerard
Author_Institution :
Minatec, IMEP-LAHC Grenoble INP, Grenoble, France
Abstract :
A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility clearly indicates that, for long devices, it is limited by phonon scatterings whereas, for sub 100nm gate lengths, the mobility is significantly degraded and almost independent with temperature. This feature is attributed to scattering by neutral defects, which are originated from source and drain process and extending over several tens of nm along the channel.
Keywords :
CMOS analogue integrated circuits; cryogenic electronics; elemental semiconductors; silicon; silicon-on-insulator; FDSOI CMOS devices; Si; drain process; effective gate lengths; low-field mobility; low-temperature operation characterization; n MOS devices; neutral defects; p MOS devices; phonon scatterings; short channel effects; size 100 nm; size 14 nm; size 15 nm; source process; subthreshold behavior; transfer characteristics; Logic gates; MOSFET; Scattering; Temperature; Temperature dependence; Temperature measurement; FDSOI; Low temperature characterization; Mobility; parameters;
Conference_Titel :
Low Temperature Electronics (WOLTE), 2014 11th International Workshop on
Conference_Location :
Grenoble
DOI :
10.1109/WOLTE.2014.6881018
