DocumentCode
1786152
Title
The contact hyperfine interaction and the integer and fractional quantum Hall effects
Author
Maude, Duncan K. ; Piot, Benjamin A. ; Desrat, W.
Author_Institution
Lab. Nat. des Champs Magnetiques Intenses, UPS, Toulouse, France
fYear
2014
fDate
7-9 July 2014
Firstpage
49
Lastpage
52
Abstract
The single particle and many body physics behind the the integer and fractional quantum Hall effects is reviewed. We explain how the composite Fermion picture of Jain describes the fractional quantum Hall effect in terms of an integer quantum Hall effect of non interacting composite fermions and provides an intuitive understanding of spin reversed fractions and competing ground states. The contact hyperfine interaction between the nuclear and electronic spins can be used to probe the electronic spin polarization of the quantum Hall system via the Knight shift of the resistively detected NMR. Finally, we describe how pulsed resistively detected NMR on gated samples can be used to probe quantum Hall states (filling factors) which have zero resistance or are not sensitive to the electronic Zeeman energy.
Keywords
MOSFET; elemental semiconductors; fermions; quantum Hall effect; silicon; Jain composite fermion picture; Knight shift; Si; competing ground states; contact hyperfine interaction; electronic Zeeman energy; electronic spin polarization; fractional quantum Hall effects; gated samples; integer quantum Hall effects; noninteracting composite fermions; nuclear spin; pulsed resistively-detected NMR; quantum Hall states; quantum Hall system; silicon MOSFET; spin-reversed fractions; Hall effect; Nuclear magnetic resonance; Polarization; Resistance; Superconducting magnets; Quantum Hall effect; contact hyperfine in-teraction; resistively detected NMR;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Electronics (WOLTE), 2014 11th International Workshop on
Conference_Location
Grenoble
Type
conf
DOI
10.1109/WOLTE.2014.6881023
Filename
6881023
Link To Document