An analytic potential and threshold voltage model for short-channel symmetric double-gate MOSFET

This paper presents a simple analytical model for potential and threshold voltage for short-channel lightly doped symmetric double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET). We have derived an expression for potential by solving 2D Poisson´s equation including both fixed and the mobile-charge term with Boltzmann´s approximation. Potential is plotted with respect to channel width and gate voltage. Then equation for minimum potential is obtained and used to formulate the threshold voltage. The threshold voltage roll-off and DIBL are performed. The model is valid from weak to strong inversion of operation.