DocumentCode :
1786207
Title :
Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors
Author :
Manikandan, R.R. ; Rao Vanukuru, Venkata Narayana ; Chakravorty, Anjan ; Amrutur, Bharadwaj
fYear :
2014
fDate :
16-18 July 2014
Firstpage :
1
Lastpage :
6
Abstract :
Layout optimized planar spiral inductors using variable width (W) and spacing (S) across their turns are known to exhibit higher quality factors (Q). In this paper, we explore the performance improvement of 3-dimensional, series-stacked, parallel-stacked, single ended, and symmetric inductor configurations with variable W&S across their turns. Parameterized cells for the aforementioned complex variable W&S inductor structures are developed in cadence using SKILL scripts for automatic generation of optimized inductor layouts with improved quality factors. The analyzed standard (constant W&S) and layout optimized (variable W&S) inductors are fabricated in a 0.18 μm silicon on insulator process. Measurement results show more than 20% improvement in quality factor for the 3-D stacked variable W&S inductor topologies. Furthermore, an accurate, scalable, and broadband compact inductor model was developed and is shown to capture the improved Q characteristics across the analyzed inductor topologies. A complementary LC-tank voltage controlled oscillator with layout optimized inductors, operating over 2.4-2.5 GHz frequency range was simulated using these developed compact models and is shown to exhibit an improved phase noise characteristics with better figure of merit.
Keywords :
LC circuits; Q-factor; UHF oscillators; elemental semiconductors; inductors; phase noise; silicon; silicon-on-insulator; voltage-controlled oscillators; 3-dimensional parallel-stacked inductor configuration; 3-dimensional series-stacked inductor configuration; 3-dimensional single ended inductor configuration; 3-dimensional symmetric inductor configuration; 3D stacked spiral inductor; SKILL script; Si; broadband compact inductor model; complementary LC-tank voltage controlled oscillator; constant W&S; figure of merit; frequency 2.4 GHz to 2.5 GHz; high-Q variable spacing; high-Q variable width; layout optimized planar stacked spiral inductor; phase noise characteristics; quality factor; silicon on insulator process; size 0.18 mum; variable W&S; Inductance; Inductors; Layout; Metals; Q-factor; Spirals; Voltage-controlled oscillators; parameterized-cell phase noise; proximity ef-fect; quality factor; silicon on insulator; spiral inductor; voltage controlled oscillator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design and Test, 18th International Symposium on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-5088-1
Type :
conf
DOI :
10.1109/ISVDAT.2014.6881053
Filename :
6881053
Link To Document :
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