Title :
A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages
Author :
Karumuri, Naveen ; Turuvekere, Sreenidhi ; DasGupta, Nandita ; Dasgupta, Avirup
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
Abstract :
An analytical model for 2 Dimensional Electron Gas (2-DEG) charge density in AlGaN/GaN High Electron Mobility Transistors is developed considering electron charge in the AlGaN barrier layer. Simplified Fermi-Dirac statistics are used to calculate the electron charge density in the AlGaN barrier. This model is valid for the entire range of operation from subthreshold to practical forward biases. The results from the model show an excellent match with simulation results from a numerical self-consistent Poisson-Schrodinger solver. The model correctly predicts the saturation of 2-DEG charge density at higher gate biases.
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; electron gas; gallium compounds; high electron mobility transistors; quantum statistical mechanics; semiconductor device models; stochastic processes; wide band gap semiconductors; 2-DEG charge density; AlGaN-GaN; Fermi-Dirac statistics; HEMT; Poisson-Schrodinger solver; electron charge; electron gas; high electron mobility transistors; Aluminum gallium nitride; Analytical models; Approximation methods; Gallium nitride; HEMTs; Logic gates; Mathematical model; 2 Dimensional Electron Gas (2-DEG); AlGaN/GaN; High Electron Mobility Transistor (HEMT); High Electron Mobility Transistor (HEMT).; analytical model; charge control model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2322697
