A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages

Author

Karumuri, Naveen ; Turuvekere, Sreenidhi ; DasGupta, Nandita ; Dasgupta, Avirup

Author_Institution

Dept. of Electr. Eng., IIT Madras, Chennai, India

Volume

61

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

2343

Lastpage

2349

Abstract

An analytical model for 2 Dimensional Electron Gas (2-DEG) charge density in AlGaN/GaN High Electron Mobility Transistors is developed considering electron charge in the AlGaN barrier layer. Simplified Fermi-Dirac statistics are used to calculate the electron charge density in the AlGaN barrier. This model is valid for the entire range of operation from subthreshold to practical forward biases. The results from the model show an excellent match with simulation results from a numerical self-consistent Poisson-Schrodinger solver. The model correctly predicts the saturation of 2-DEG charge density at higher gate biases.

Keywords

III-V semiconductors; Schrodinger equation; aluminium compounds; electron gas; gallium compounds; high electron mobility transistors; quantum statistical mechanics; semiconductor device models; stochastic processes; wide band gap semiconductors; 2-DEG charge density; AlGaN-GaN; Fermi-Dirac statistics; HEMT; Poisson-Schrodinger solver; electron charge; electron gas; high electron mobility transistors; Aluminum gallium nitride; Analytical models; Approximation methods; Gallium nitride; HEMTs; Logic gates; Mathematical model; 2 Dimensional Electron Gas (2-DEG); AlGaN/GaN; High Electron Mobility Transistor (HEMT); High Electron Mobility Transistor (HEMT).; analytical model; charge control model;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2322697

Filename

6819794