DocumentCode :
1786785
Title :
Throughput optimization for SADP and e-beam based manufacturing of 1D layout
Author :
Yixiao Ding ; Chu, Chris ; Wai-Kei Mak
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
1
Lastpage :
6
Abstract :
Due to the resolution limitations of optical lithography equipment, 1D gridded layout design is gaining steam. Self-aligned double patterning (SADP) is a mature technology for printing 1D layouts. However, for 20nm and beyond, SADP using a single trim mask becomes insufficient for printing all 1D layouts. A viable solution is to complement SADP with e-beam lithography. In this paper, in order to increase the throughput of printing a 1D layout, we consider the problem of e-beam shot count minimization subject to bounded line end extension constraints. Two different approaches of utilizing the trim mask and e-beam to print a layout are considered. The first approach is under the assumption that the trim mask and e-beam are used for end cutting. The second is under the assumption that the trim mask and e-beam are used to rid of all unnecessary portions. We propose elegant ILP formulations for both approaches. Experimental results show that both ILP formulations can be solved efficiently. The pros and cons of the two approaches for manufacturing 1D layout are discussed.
Keywords :
electron beam lithography; integer programming; linear programming; nanolithography; nanopatterning; 1D layout; ILP formulations; SADP; e-beam based manufacturing; e-beam lithography; self-aligned double patterning; single trim mask; throughput optimization; wavelength 20 nm; Benchmark testing; Layout; Lithography; Metals; Printing; Wires; SADP; e-beam; end cutting; gap removal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (DAC), 2014 51st ACM/EDAC/IEEE
Conference_Location :
San Francisco, CA
Type :
conf
Filename :
6881378
Link To Document :
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