DocumentCode :
1786876
Title :
Write mode aware loop tiling for high performance low power volatile PCM
Author :
Keni Qiu ; Qingan Li ; Xue, Chun Jason
Author_Institution :
City Univ. of Hong Kong, Kowloon, China
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
1
Lastpage :
6
Abstract :
Architecting PCM, especially MLC PCM, as main memory for MCUs is a promising technique to replace conventional DRAM deployment. However, PCM/MLC PCM suffers from long write latency and large write energy. Recent work has proposed a compiler directed dual-write (CDDW) scheme to combat the drawbacks of PCM by adopting fast or slow write mode for different write operations. We observe that write instances´ lifetime is very long and can only be written by the expensive slow mode for large-scale loops. This paper proposes a write mode aware loop tiling approach to effectively reduce the lifetime of write instances and maximize the number of efficient fast writes in loops. The experimental results show that the proposed approach improves performance by 50.8% and reduces dynamic energy by 32.0% across a set of benchmarks compared to the CDDW approach on average.
Keywords :
phase change memories; program control structures; programming; CDDW scheme; MCU; MLC PCM; compiler directed dual-write scheme; for high performance low power volatile PCM; microcontroller unit; phase change memory; write energy; write instances lifetime; write latency; write mode aware loop tiling; write operations; Arrays; Equations; Law; Phase change materials; Resistance; Vectors; MLC PCM; dynamic energy; loop tiling; write mode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (DAC), 2014 51st ACM/EDAC/IEEE
Conference_Location :
San Francisco, CA
Type :
conf
Filename :
6881433
Link To Document :
بازگشت