DocumentCode :
1787574
Title :
Cellular neural networks for image analysis using steep slope devices
Author :
Palit, Indranil ; Qiuwen Lou ; Niemier, Michael ; Sedighi, Behnam ; Nahas, Joseph ; Hu, Xiaobo Sharon
Author_Institution :
Dept. of Comput. Sci. & Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fYear :
2014
fDate :
2-6 Nov. 2014
Firstpage :
92
Lastpage :
95
Abstract :
Traditional CMOS based von Neumann architectures face daunting challenges in performing complex computational tasks at high speed and with low power on spatio-temporal data, e.g., image processing, pattern recognition, etc. In this study, we discuss the utilities of various steep slope, beyond-CMOS emerging devices for image processing applications within the non-von Neumann computing paradigm of cellular neural networks (CNNs). In general, the steep subthreshold swing of the devices obviates the output transfer hardware used in a conventional CNN cell. For image processing with binary stable outputs, Tunnelling FETs (TFETs) can facilitate low power operation. For multi-valued problems, devices like graphene transistors, Symmetric tunnelling FETs (SymFETs) might be leveraged to solve a problem with fewer computational steps. The potential for additional hardware reduction when compared to functional equivalents via conventional CNNs is also possible. Emerging devices can also lead to lower power implementations of the voltage controlled current sources (VCCSs) that are an integral component of any CNN cell. Furthermore, non-linear implementations of the VCCSs via emerging devices could enable simpler computational paths for many image processing tasks.
Keywords :
CMOS integrated circuits; cellular neural nets; field effect transistors; graphene; image processing; low-power electronics; tunnel transistors; CMOS based von Neumann architectures; CNNs; SymFETs; TFETs; VCCSs; beyond-CMOS emerging devices; cellular neural networks; graphene transistors; image analysis; image processing applications; multivalued problems; nonvon Neumann computing paradigm; steep slope devices; symmetric tunnelling FETs; voltage controlled current sources; CMOS integrated circuits; Cellular neural networks; Computer architecture; Graphene; Image processing; Microprocessors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2014 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Type :
conf
DOI :
10.1109/ICCAD.2014.7001337
Filename :
7001337
Link To Document :
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