• DocumentCode
    1787740
  • Title

    Planning and placing power clamps for effective CDM protection

  • Author

    Hsin-Chun Lin ; Liu, Sean S.-Y ; Hung-Ming Chen

  • Author_Institution
    Electron. Engr Dept. & SoC Center, NCTU, Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    2-6 Nov. 2014
  • Firstpage
    663
  • Lastpage
    669
  • Abstract
    The issue on reliability of the device becomes more critical as power density of device progressively increases with advancement of technology nodes. Smaller transistor and hence thinner gate oxide implies transistors are more vulnerable against an Electrostatic Discharge (ESD) event. Among the test models in ESD, Charged Device Model (CDM) has greater potential to cause catastrophic damage to the device due to its faster and larger discharging current. To protect against a CDM event, power clamps are placed across the design to offer a low resistance discharge path. However, conventional power clamp placement method to place power clamps generally relies on design experience. In this work, we propose a power clamp placement algorithm that places power clamp at strategic location which can effectively minimize number of power clamps while achieving better protection against a CDM event compared to conventional approach.
  • Keywords
    clamps; electrostatic discharge; integrated circuit reliability; integrated circuit technology; CDM protection; ESD event; charged device model; device reliability; electrostatic discharge; gate oxide; low resistance discharge path; power clamp placement algorithm; power density; Algorithm design and analysis; Capacitors; Clamps; Discharges (electric); Electrostatic discharges; Pins; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2014 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • DOI
    10.1109/ICCAD.2014.7001423
  • Filename
    7001423