DocumentCode :
1787752
Title :
Random walk based capacitance extraction for 3D ICs with cylindrical inter-tier-vias
Author :
Wenjian Yu ; Chao Zhang ; Qing Wang ; Yiyu Shi
Author_Institution :
Dept. of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear :
2014
fDate :
2-6 Nov. 2014
Firstpage :
702
Lastpage :
709
Abstract :
Three-dimensional integrated circuits (3D ICs) make use of the vertical dimension for smaller footprint, higher speed, lower power consumption, and better timing performance. In 3D ICs, the inter-tier-via (ITV) is a critical enabling technique because it forms vertical signal and power paths. Accordingly, it is imperative to accurately and efficiently extract the electrostatic capacitances of ITVs using field solvers. Unfortunately, the cylindrical via shape presents major challenges to most of the existing methods. To address this issue, we develop a novel floating random walk (FRW) method by rotating the transition cube to suit the cylindrical surface and devising a special space management technique. Experiments on typical ITV structures suggest that the proposed techniques can accelerate the existing FRW and boundary element method (BEM) based algorithms by up to 20X and 180X, respectively, without loss of accuracy. In addition, compared with the naïve square approximation approach, our techniques can reduce the error by 10X. Large and multi-dielectric structures have been tested to demonstrate the versatility of the proposed techniques.
Keywords :
boundary-elements methods; capacitance; integrated circuit modelling; three-dimensional integrated circuits; 3D IC; BEM based algorithms; FRW method; ITV structures; boundary element method based algorithms; cylindrical via shape; electrostatic capacitances; field solvers; floating random walk method; inter-tier-via; multi-dielectric structures; power paths; space management technique; three-dimensional integrated circuits; transition cube; vertical dimension; vertical signal; Approximation methods; Capacitance; Conductors; Electrostatics; Three-dimensional displays; Through-silicon vias; Wires; capacitance extraction; floating random walk method; monolithic inter-tier via (MIV); three-dimensional (3D) IC; through-silicon-via (TSV);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2014 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Type :
conf
DOI :
10.1109/ICCAD.2014.7001429
Filename :
7001429
Link To Document :
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