DocumentCode
1787793
Title
The solid solutions (AIII) Px As1−x : Mechanism of formation the V group sublattise composition
Author
Emelyanov, Eugene A. ; Putyato, Mikhail A. ; Semyagin, Boris R. ; Feklin, Dmitrii F. ; Preobrazhenskii, Valerii V.
Author_Institution
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
7
Lastpage
9
Abstract
The influence of substrate temperature, density of As2, P2 molecules and Ga atoms flows on solid solutions AlPxAs1-x(001), GaPxAs1-x(001) and InPxAs1-x(001) composition at molecular-beam epitaxy (MBE) was investigated. The analysis of experimental data obtained in a wide range of growth conditions was carried out. The results of analysis are presented as a kinetic model describing the formation process of solid solution (AIII)PxAs1-x composition by MBE. The model can be used in the choice of growth conditions for solid solutions (AIII)PxAs1-x(001) layers with a set part of phosphor.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; phosphors; phosphorus compounds; semiconductor epitaxial layers; semiconductor growth; solid solutions; AlPxAs1-x; GaAs; GaPxAs1-x; InPAs1-x; MBE; compositional properties; density influence; group V sublattice composition; kinetic model; molecular beam epitaxy; phosphor; solid solutions; substrate temperature; Atomic layer deposition; Gallium; Molecular beam epitaxial growth; Phosphors; Physics; Solid modeling; Solids; AIIIBV solid solution; MBE;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location
Novosibirsk
ISSN
2325-4173
Print_ISBN
978-1-4799-4669-3
Type
conf
DOI
10.1109/EDM.2014.6882463
Filename
6882463
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