DocumentCode
1787807
Title
HgCdTe surface stabilization by ultrathin native oxide
Author
Kesler, Valeriy G. ; Zakirov, Evgeniy R.
Author_Institution
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
33
Lastpage
35
Abstract
The work is devoted to investigation and comparison of platinum deposition and vacuum anneal processes in cases of a chemically treated surface and with ultrathin (~ 1 nm) native oxide. The chemical composition and film thickness were measured by X-ray photoelectron spectroscopy (XPS) at different stages of deposition or directly during annealing without exposition of samples to laboratory atmosphere. Deposition of platinum on the oxidized surface results in less chemical composition violation and tellurium diffusion than if without oxide. Also presence of the thin oxide layer significantly increases range of HgCdTe thermal stability.
Keywords
II-VI semiconductors; X-ray photoelectron spectra; annealing; cadmium compounds; mercury compounds; platinum; surface diffusion; surface treatment; thermal stability; HgCdTe; Pt; X-ray photoelectron spectroscopy; XPS; chemical composition; chemically treated surface; film thickness; platinum deposition; surface stabilization; tellurium diffusion; thermal stability; ultrathin native oxide; vacuum annealing; Annealing; Chemicals; Mercury (metals); Physics; Platinum; Surface treatment; Tellurium; HgCdTe; Platinum deposition; Thin native oxide; Vacuum anneal; XPS;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location
Novosibirsk
ISSN
2325-4173
Print_ISBN
978-1-4799-4669-3
Type
conf
DOI
10.1109/EDM.2014.6882470
Filename
6882470
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