• DocumentCode
    1787807
  • Title

    HgCdTe surface stabilization by ultrathin native oxide

  • Author

    Kesler, Valeriy G. ; Zakirov, Evgeniy R.

  • Author_Institution
    A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    33
  • Lastpage
    35
  • Abstract
    The work is devoted to investigation and comparison of platinum deposition and vacuum anneal processes in cases of a chemically treated surface and with ultrathin (~ 1 nm) native oxide. The chemical composition and film thickness were measured by X-ray photoelectron spectroscopy (XPS) at different stages of deposition or directly during annealing without exposition of samples to laboratory atmosphere. Deposition of platinum on the oxidized surface results in less chemical composition violation and tellurium diffusion than if without oxide. Also presence of the thin oxide layer significantly increases range of HgCdTe thermal stability.
  • Keywords
    II-VI semiconductors; X-ray photoelectron spectra; annealing; cadmium compounds; mercury compounds; platinum; surface diffusion; surface treatment; thermal stability; HgCdTe; Pt; X-ray photoelectron spectroscopy; XPS; chemical composition; chemically treated surface; film thickness; platinum deposition; surface stabilization; tellurium diffusion; thermal stability; ultrathin native oxide; vacuum annealing; Annealing; Chemicals; Mercury (metals); Physics; Platinum; Surface treatment; Tellurium; HgCdTe; Platinum deposition; Thin native oxide; Vacuum anneal; XPS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
  • Conference_Location
    Novosibirsk
  • ISSN
    2325-4173
  • Print_ISBN
    978-1-4799-4669-3
  • Type

    conf

  • DOI
    10.1109/EDM.2014.6882470
  • Filename
    6882470