DocumentCode :
1787807
Title :
HgCdTe surface stabilization by ultrathin native oxide
Author :
Kesler, Valeriy G. ; Zakirov, Evgeniy R.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
33
Lastpage :
35
Abstract :
The work is devoted to investigation and comparison of platinum deposition and vacuum anneal processes in cases of a chemically treated surface and with ultrathin (~ 1 nm) native oxide. The chemical composition and film thickness were measured by X-ray photoelectron spectroscopy (XPS) at different stages of deposition or directly during annealing without exposition of samples to laboratory atmosphere. Deposition of platinum on the oxidized surface results in less chemical composition violation and tellurium diffusion than if without oxide. Also presence of the thin oxide layer significantly increases range of HgCdTe thermal stability.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; annealing; cadmium compounds; mercury compounds; platinum; surface diffusion; surface treatment; thermal stability; HgCdTe; Pt; X-ray photoelectron spectroscopy; XPS; chemical composition; chemically treated surface; film thickness; platinum deposition; surface stabilization; tellurium diffusion; thermal stability; ultrathin native oxide; vacuum annealing; Annealing; Chemicals; Mercury (metals); Physics; Platinum; Surface treatment; Tellurium; HgCdTe; Platinum deposition; Thin native oxide; Vacuum anneal; XPS;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
ISSN :
2325-4173
Print_ISBN :
978-1-4799-4669-3
Type :
conf
DOI :
10.1109/EDM.2014.6882470
Filename :
6882470
Link To Document :
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