Title :
Determination of Si - Native SiO2 interface surface state density of SOI-nanowire sensors
Author :
Malyarenko, Nikolay F. ; Naumova, Olga V. ; Fomin, Boris I. ; Zhanaev, Erdem D. ; Popov, Vladimir P.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The method of determination of the Si - native SiO2 interface surface state density of double-gate transistors was applied for SOI-nanowire sensors. This method is based on the using of dependence of the top gate voltage on threshold voltage VthBG (VTG ) . Si - native SiO2 interface surface state density of SOI-nanowire sensors immersed in the clear buffer solutions and in the buffer solutions with different concentration of protein was measured.
Keywords :
elemental semiconductors; field effect transistors; interface states; nanosensors; nanowires; silicon; silicon compounds; silicon-on-insulator; surface states; SOI-nanowire sensors; Si-SiO2; clear buffer solutions; double-gate transistors; interface surface state density; protein concentration; threshold voltage; top gate voltage; Chemicals; Logic gates; Nanobioscience; Proteins; Sensors; Silicon; Threshold voltage; SOI; nanowire sensors; surface state density;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882473
