Determination of Si - Native SiO2 interface surface state density of SOI-nanowire sensors

Author

Malyarenko, Nikolay F. ; Naumova, Olga V. ; Fomin, Boris I. ; Zhanaev, Erdem D. ; Popov, Vladimir P.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

42

Lastpage

44

Abstract

The method of determination of the Si - native SiO₂ interface surface state density of double-gate transistors was applied for SOI-nanowire sensors. This method is based on the using of dependence of the top gate voltage on threshold voltage V_thBG (V_TG ) . Si - native SiO₂ interface surface state density of SOI-nanowire sensors immersed in the clear buffer solutions and in the buffer solutions with different concentration of protein was measured.

Keywords

elemental semiconductors; field effect transistors; interface states; nanosensors; nanowires; silicon; silicon compounds; silicon-on-insulator; surface states; SOI-nanowire sensors; Si-SiO₂; clear buffer solutions; double-gate transistors; interface surface state density; protein concentration; threshold voltage; top gate voltage; Chemicals; Logic gates; Nanobioscience; Proteins; Sensors; Silicon; Threshold voltage; SOI; nanowire sensors; surface state density;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882473

Filename

6882473