DocumentCode :
1787819
Title :
Examination of catalytic GaAs nanowire growth by Monte Carlo simulation
Author :
Knyazeva, Maria V. ; Shwartz, Nataliya L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
54
Lastpage :
56
Abstract :
Examination of catalytic GaAs nanowire growth using Monte Carlo simulation was fulfilled. It was demonstrated that characteristics of NW growth were crucially depended on arsenic to gallium flux ratio. NW grew only starting from certain FAs2/FGa value. With following FAs2/FGa raise NW growth rate increased and then saturated. Optimal temperature, ratio of gallium and arsenic flux intensities corresponding to maximal GaAs NW growth rate were detected.
Keywords :
III-V semiconductors; Monte Carlo methods; catalysis; gallium arsenide; nanofabrication; nanowires; semiconductor growth; GaAs; Monte Carlo simulation; arsenic-to-gallium flux ratio; catalytic gallium arsenide nanowire growth; optimal temperature; Gallium; Gallium arsenide; Gold; Monte Carlo methods; Nanoscale devices; Surface morphology; Wires; GaAs; Monte Carlo; nanowire; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
ISSN :
2325-4173
Print_ISBN :
978-1-4799-4669-3
Type :
conf
DOI :
10.1109/EDM.2014.6882476
Filename :
6882476
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1787819
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