Title :
2D modeling of photoelectric part of silicon pressure sensor
Author :
Chernov, Artyom S. ; Chebanov, M.A. ; Byalik, Alexander D. ; Gridchin, V.A. ; Vasilyev, V.Yu.
Author_Institution :
RAMIT LLC, Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
A 2D numerical model of the photoelectric part of silicon photoelectric pressure sensor is proposed. This part consists of a differential pair of photodiode designed by a standard silicon CMOS technology. The model is based on the area partition of a photodiode into separate segments. It is shown that the resistance of dark area segments decreases the magnitude of the output signal of the photoelectric part of the pressure sensor.
Keywords :
CMOS integrated circuits; elemental semiconductors; microsensors; photodiodes; pressure sensors; semiconductor device models; silicon; 2D numerical model; MEMS; Si; microsystem technology; photodiode; silicon photoelectric pressure sensor; standard silicon CMOS technology; Educational institutions; Optical fiber sensors; Optical fibers; Photodiodes; Resistance; Semiconductor device modeling; Silicon; CMOS photodiode; MEMS; microsystem technology; optic fiber; pressure sensor;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882479
