2D modeling of photoelectric part of silicon pressure sensor

Author

Chernov, Artyom S. ; Chebanov, M.A. ; Byalik, Alexander D. ; Gridchin, V.A. ; Vasilyev, V.Yu.

Author_Institution

RAMIT LLC, Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

67

Lastpage

71

Abstract

A 2D numerical model of the photoelectric part of silicon photoelectric pressure sensor is proposed. This part consists of a differential pair of photodiode designed by a standard silicon CMOS technology. The model is based on the area partition of a photodiode into separate segments. It is shown that the resistance of dark area segments decreases the magnitude of the output signal of the photoelectric part of the pressure sensor.

Keywords

CMOS integrated circuits; elemental semiconductors; microsensors; photodiodes; pressure sensors; semiconductor device models; silicon; 2D numerical model; MEMS; Si; microsystem technology; photodiode; silicon photoelectric pressure sensor; standard silicon CMOS technology; Educational institutions; Optical fiber sensors; Optical fibers; Photodiodes; Resistance; Semiconductor device modeling; Silicon; CMOS photodiode; MEMS; microsystem technology; optic fiber; pressure sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882479

Filename

6882479