Title :
Current relaxation in PbSnTe:In in a strong magnetic field
Author :
Akimov, Aleksey N. ; Epov, Vladimir S. ; Klimov, Alexander E. ; Neizvestny, Igor G. ; Shumsky, Vladimir N.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
Current change dynamics in the injection regime out of contacts and limitations by spatial charge at a fast (about 0.1 sec.) magnetic field turn on and off, strength to 4 T, were investigated in PbSnTe:In film-based structures at T=4.2 K. Peculiarities of current relaxation are discussed within the model that implies the presence of traps levels, distributed over energy, in the PbSnTe:In band gap.
Keywords :
IV-VI semiconductors; energy gap; indium; lead compounds; semiconductor thin films; tin compounds; PbSnTe:In; PbSnTe:In film-based structures; band gap; current change dynamics; current relaxation; injection regime; magnetic field; magnetic flux density 4 T; spatial charge; trap levels; Lead; Lighting; Magnetic fields; Photoconductivity; Physics; Temperature measurement; Tin; PbSnTe:In; injection out of contacts; narrow-band semiconductor; photocurrent; relaxation; traps;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882480
