Title :
Temperature-dependent photocurrent decay in PbSnTe:In films
Author :
Akimov, Aleksey N. ; Epov, Vladimir S. ; Klimov, Alexander E. ; Shumsky, Vladimir N.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The temperature-dependent photocurrent decay in PbSnTe:In films has been studied in the interval of temperatures T≈20-30 K at each implemented temperature having been stabilized accurate to ΔT≈0.01 K. The time constant of the process, whose value in the examined temperature interval proved to be ranging from ≈1.0 s to ≈200 s, was measured. The behavior displayed by the curve τ(T) is discussed on the assumption that, in the examined interval of temperatures, a ferroelectric transition occurs in PbSnTe:In.
Keywords :
IV-VI semiconductors; ferroelectric thin films; ferroelectric transitions; indium; lead compounds; photoconductivity; semiconductor thin films; tin compounds; PbSnTe:In; PbSnTe:In films; ferroelectric transition; temperature-dependent photocurrent decay; temperatures interval; time constant; Electrical resistance measurement; Films; Photoconductivity; Resistance; Temperature dependence; Temperature distribution; Temperature measurement; PbSnTe:In; narrow gap semiconductor; photocurrent decay;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882481
