Title :
Effect of magnetic field on the sensitivity of PbSnTe:In films to THz radiation
Author :
Epov, Vladimir S. ; Klimov, Alexander E. ; Kubarev, V.V. ; Paschin, Nikolai S. ; Shumsky, Vladimir N.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The variation of conductivity and charge-carrier concentration in PbSnTe:In films with magnetic-field strength in samples exposed to illumination with free-electron-laser radiation at wavelengths λ=138.5 μm and 200 μm and, in addition, to illumination in the fundamental absorption band of the material, was examined. At certain magnetic-field strengths, measured dependences exhibited distinct maxima; the emergence of those maxima was interpreted within the concept of a quasi-continuous energy spectrum of traps for charge carriers in the band-gap of PbSnTe:In.
Keywords :
IV-VI semiconductors; carrier density; electrical conductivity; energy gap; indium; lead compounds; magnetic field effects; semiconductor thin films; tin compounds; PbSnTe:In; THz radiation sensitivity; absorption band; band gap; charge carrier trap; charge-carrier concentration; electrical conductivity; free-electron-laser radiation; magnetic-field strength; quasicontinuous energy spectrum; thin films; wavelength 138.5 mum; wavelength 200 mum; Absorption; Electron traps; Films; Lighting; Magnetic fields; Physics; Sensitivity; PbSnTe:In; THz radiation; magnetic field; photocurrent; traps;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882482
