Title :
Temperature Resolution of Pb1−xSnxTe:In-based photosensing film structures under illumination with blackbody radiation
Author :
Ischenko, Denis V. ; Klimov, Alexander E. ; Neizvestny, Igor G. ; Paschin, Nikolai S. ; Sherstyakova, Valentina N. ; Shumsky, Vladimir N.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
In the present study, we examined the sensitivity of PbSnTe:In to radiation in the very-long-wave infrared spectral region. Experimental data on the dynamics of increase of the photocurrent in PbSnTe:In films illuminated with radiation emitted by a model blackbody are reported. The range of radiator temperatures was 50 to 75 K, and the temperature of examined samples was 4.2 K. Photocurrent relaxation curves measured on turning-on and turning-off of the illumination are presented. Specific features of charge-carrier transport at helium temperatures in samples dominated by contact injection of carriers are discussed. The response of the current to blackbody-radiator temperature modulation was studied. The temperature sensitivity has been estimated as amounting to ~ 44 nA/K.
Keywords :
blackbody radiation; electric current measurement; indium; infrared detectors; lead compounds; photoconductivity; photodetectors; photoemission; temperature measurement; temperature sensors; thin film sensors; Illumination; Pb1-xSnxTe:In; blackbody radiation emission; blackbody-radiator temperature modulation; charge-carrier transport; contact carrier injection; photocurrent relaxation curve measurement; photosensing film structure; temperature 4.2 K; temperature 50 K to 75 K; temperature resolution; very-long-wave infrared spectral region; Films; Lead; Physics; Sensitivity; Temperature measurement; Temperature sensors; Tin; PbSnTe:In; contact injection; narrow-gap semiconductor; photocurrent; relaxation; traps;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882483
