Epitaxial CaF2/BaF2-on-Si layers and electronic properties of the interface with the substrate

Author

Fedosenko, Evgeniy V. ; Akimov, Aleksey N. ; Klimov, Alexander E. ; Shumsky, Vladimir N. ; Erkov, Vladimir G. ; Suprun, Sergey P.

Author_Institution

Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

90

Lastpage

94

Abstract

Layers of CaF₂ and BaF₂ were grown on Si substrates using molecular beam epitaxy. X-ray photoelectron spectroscopy has shown that the interface in Si-BaF₂ structure at 750°C is mainly formed with Si-Ba bonds. Metal-insulator structures have been formed, and capacitance-voltage characteristics (C-V and G-V characteristics) were measured at various test voltage frequencies. Despite of the high density of broken bonds at the interface (about 10¹⁴ cm^-2), the density of electronic states calculated from C-V and G-V characteristics was about 10¹¹ eV^-1cm^-2.

Keywords

X-ray photoelectron spectra; barium compounds; bonds (chemical); calcium compounds; electronic density of states; epitaxial layers; interface structure; metal-insulator boundaries; molecular beam epitaxial growth; BaF₂-Si; C-V characteristics; CaF₂-Si; G-V characteristics; Si; X-ray photoelectron spectroscopy; broken bonds; capacitance-voltage characteristics; density of electronic states; electronic properties; epitaxial layers; metal-insulator structures; molecular beam epitaxy; temperature 750 degC; test voltage frequencies; Epitaxial growth; Frequency measurement; Silicon; Substrates; Temperature; Dielectric materials; Interfaces; Molecular Beam Epitaxy; Recrystallization; Semiconducting materials; Surface processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882484

Filename

6882484