DocumentCode :
1787839
Title :
Synthesis of conducting films In2O3:Sn with the method of magnetron sputtering and their electrophysical properties
Author :
Troyan, P.E. ; Zhidik, Yury S. ; Sakharov, Yury V.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radio Electron., Tomsk, Russia
fYear :
2014
fDate :
June 30 2014-July 4 2014
Firstpage :
98
Lastpage :
101
Abstract :
This article presents research results of optical and electric properties of transparent ITO electroconductive films, their change at the variation of the drawing mode films with the method of magnetron sputtering. The technological mode that helps to receive ITO 100 nanometers thick films with superficial resistance of 10 Ω/□ and transmission coefficient of 87% is described.
Keywords :
electrical conductivity; indium compounds; semiconductor thin films; sputter deposition; tin; ultraviolet spectra; visible spectra; ITO; conducting films; electric properties; electrophysical properties; magnetron sputtering; optical properties; size 100 nm; superficial resistance; thick films; transmission coefficient; transparent electroconductive films; Annealing; Atmosphere; Films; Indium tin oxide; Resistance; Sputtering; Substrates; Indic oxide doped by tin (ITO); high-temperature annealing; reactive magnetron dispersion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
ISSN :
2325-4173
Print_ISBN :
978-1-4799-4669-3
Type :
conf
DOI :
10.1109/EDM.2014.6882486
Filename :
6882486
Link To Document :
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