Ultrawideband power detector GaAs MMIC´s

Author

Zagorodny, A.S. ; Voronin, N.N. ; Yunusov, I.V. ; Gushchin, V.A.

Author_Institution

Tomsk state Univ. of Control Syst. & Radioelectron., Tomsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

164

Lastpage

166

Abstract

The results of design and manufacturing of absorbed power detectors MMIC´s and directional power detector MMIC with frequency range up to 40 GHz based on zero-bias diodes are presented in this paper. Measured S-parameters show input return loss less than -18 dB. Absorbed power detector has 80 dB dynamic range. Directional power detector has low insertion loss (less than 2 dB), high voltage sensitivity and directivity more than 12 dB.

Keywords

III-V semiconductors; MMIC; gallium arsenide; integrated circuit design; microwave detectors; millimetre wave detectors; power integrated circuits; GaAs; absorbed power detectors MMIC design; directional power detector MMIC manufacturing; directivity; high-voltage sensitivity; measured S-parameters; ultrawideband power detector gallium arsenide MMIC; zero-bias diodes; Detectors; MMICs; Microwave devices; Microwave measurement; Schottky diodes; RF power detector; gallium arsenide; monolithic microwave integrated circuit; zero-bias diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882503

Filename

6882503