Title :
Ultrawideband power detector GaAs MMIC´s
Author :
Zagorodny, A.S. ; Voronin, N.N. ; Yunusov, I.V. ; Gushchin, V.A.
Author_Institution :
Tomsk state Univ. of Control Syst. & Radioelectron., Tomsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The results of design and manufacturing of absorbed power detectors MMIC´s and directional power detector MMIC with frequency range up to 40 GHz based on zero-bias diodes are presented in this paper. Measured S-parameters show input return loss less than -18 dB. Absorbed power detector has 80 dB dynamic range. Directional power detector has low insertion loss (less than 2 dB), high voltage sensitivity and directivity more than 12 dB.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit design; microwave detectors; millimetre wave detectors; power integrated circuits; GaAs; absorbed power detectors MMIC design; directional power detector MMIC manufacturing; directivity; high-voltage sensitivity; measured S-parameters; ultrawideband power detector gallium arsenide MMIC; zero-bias diodes; Detectors; MMICs; Microwave devices; Microwave measurement; Schottky diodes; RF power detector; gallium arsenide; monolithic microwave integrated circuit; zero-bias diode;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882503
