CNTFET-based low power design of 4-input ternary XOR function

This paper proposes a low power design of 4-input ternary XOR function using carbon nano tube field effect transistors (CNTFETs). In CNTFET, the desired threshold voltage can be achieved by setting the diameter of CNTs. Based on this unique property of CNTFET, the proposed XOR gate is designed utilizing multi-diameter CNTs for multi threshold structure. The direct implementation of ternary XOR function at the transistor level reduces the number of transistors drastically. The proposed design is simulated using HSPICE simulator with 32nm Stanford CNTFET model. The simulation results shows that at 0.9V power supply voltage, the proposed design consumes 74% less power (or 69% less energy) in comparison with the existing conventional CNTFET based 4-input ternary XOR circuit.