DocumentCode :
1789099
Title :
Study of device physics in impact ionisation MOSFET using synopsys TCAD tools
Author :
Shruthi, A.S. ; Archna, A.M. ; Ponni, M. ; Vaya, Pukhraj
Author_Institution :
Dept. of Electron. & Commun. Eng., Amrita Vishwa Vidyapeetham Univ., Bangalore, India
fYear :
2014
fDate :
10-11 Oct. 2014
Firstpage :
1
Lastpage :
6
Abstract :
Impact ionisation MOSFET (IMOS) is a new and promising alternative for conventional MOSFET owing to its low subthreshold slope. With the aid of TCAD simulation tools and the resultant figures, the basic physics behind IMOS operation has been studied in this paper. The Id-Vg curve resulting from this study having a subthreshold slope of 1.272mV/dec is also presented in the paper.
Keywords :
MOSFET; impact ionisation; technology CAD (electronics); IMOS; impact ionisation MOSFET; synopsys TCAD tools; Avalanche breakdown; Electric fields; Impact ionization; Logic gates; MOSFET; Physics; Semiconductor process modeling; avalanche breakdown; impact ionisation; pin diode; subthreshold slope;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Electronics, Computers and Communications (ICAECC), 2014 International Conference on
Conference_Location :
Bangalore
Type :
conf
DOI :
10.1109/ICAECC.2014.7002450
Filename :
7002450
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1789099
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