• DocumentCode
    1789099
  • Title

    Study of device physics in impact ionisation MOSFET using synopsys TCAD tools

  • Author

    Shruthi, A.S. ; Archna, A.M. ; Ponni, M. ; Vaya, Pukhraj

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Amrita Vishwa Vidyapeetham Univ., Bangalore, India
  • fYear
    2014
  • fDate
    10-11 Oct. 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Impact ionisation MOSFET (IMOS) is a new and promising alternative for conventional MOSFET owing to its low subthreshold slope. With the aid of TCAD simulation tools and the resultant figures, the basic physics behind IMOS operation has been studied in this paper. The Id-Vg curve resulting from this study having a subthreshold slope of 1.272mV/dec is also presented in the paper.
  • Keywords
    MOSFET; impact ionisation; technology CAD (electronics); IMOS; impact ionisation MOSFET; synopsys TCAD tools; Avalanche breakdown; Electric fields; Impact ionization; Logic gates; MOSFET; Physics; Semiconductor process modeling; avalanche breakdown; impact ionisation; pin diode; subthreshold slope;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Electronics, Computers and Communications (ICAECC), 2014 International Conference on
  • Conference_Location
    Bangalore
  • Type

    conf

  • DOI
    10.1109/ICAECC.2014.7002450
  • Filename
    7002450
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1789099