Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise

Author

Scarpino, Mercedes ; Gupta, Swastik ; Lin, Dongyang ; Alian, A. ; Crupi, Felice ; Collaert, Nadine ; Thean, A. ; Simoen, Eddy

Author_Institution

Dipt. di Ing. Inf., Univ. della Calabria, Rende, Italy

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

720

Lastpage

722

Abstract

The low-frequency noise of n-channel InGaAs MOSFETs with Al₂O₃ gate dielectric has been studied to assess the impact of a S-passivation treatment on the border trap (BT) density. It is shown that the spectra are predominantly (1/f) -like, while the normalized noise power spectral density (PSD) behaves according to the number fluctuations theory. The BT density derived from the input-referred voltage noise PSD exhibits a flat depth profile for the three processing conditions studied, with a pronounced reduction due to the S treatment. Additional excess (1/f) and generation-recombination noise sources are found as well, which are more related to the epitaxial material.

Keywords

1/f noise; III-V semiconductors; MOSFET; alumina; gallium arsenide; indium compounds; number theory; passivation; semiconductor device noise; 1/f noise sources; Al₂O₃; BT density; InGaAs; S-passivation treatment; border trap density; epitaxial material; flat depth profile; gate dielectric; generation-recombination noise sources; input-referred voltage noise PSD; low-frequency noise; n-channel MOSFETs; normalized noise power spectral density; number fluctuation theory; Indium gallium arsenide; Indium phosphide; Logic gates; Low-frequency noise; MOSFET; III-V MOSFET; S passivation; S passivation.; border traps; low-frequency noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2322388

Filename

6819797