DocumentCode :
1790368
Title :
In-pixel calibration of temperature dependent FPN for a wide dynamic-range dual-capture CMOS image sensor
Author :
Inkyu Baek ; Byeungseok Yoo ; Kyounghoon Yang
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear :
2014
fDate :
22-25 June 2014
Firstpage :
1
Lastpage :
3
Abstract :
This paper proposes a novel in-pixel calibration method of temperature dependent fixed pattern noise (FPN) for a wide dynamic range dual-capture image sensor. The proposed method is based on a pinned photodiode (PD)-storage dual-capture operation using a non-fully depleted PD to calibrate the temperature dependent threshold voltage variation of the transfer gate (TG). The prototype CMOS image sensor including a 320 × 240 pixel array with a 2.25 μm pixel pitch has been fabricated using a 0.13 μm CIS technology. The proposed method is found to reduce the FPN of the dual-capture active pixel sensor (APS) by 70 % with a dynamic range of 95 dB in a temperature range of 25 °C to 80 °C.
Keywords :
CMOS image sensors; calibration; noise; photodiodes; CIS technology; dual-capture active pixel sensor; in-pixel calibration; pinned photodiode-storage dual-capture operation; size 0.13 mum; temperature 25 degC to 80 degC; temperature dependent FPN; temperature dependent fixed pattern noise; threshold voltage variation; transfer gate; wide dynamic-range dual-capture CMOS image sensor; CMOS image sensors; Calibration; Dynamic range; Temperature; Temperature dependence; Temperature measurement; Temperature sensors; CMOS image sensor; Calibration; dynamic range; fixed pattern noise; non-fully depleted pinned photodiode; temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Consumer Electronics (ISCE 2014), The 18th IEEE International Symposium on
Conference_Location :
JeJu Island
Type :
conf
DOI :
10.1109/ISCE.2014.6884407
Filename :
6884407
Link To Document :
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