Title :
Analysis of thermal behavior for 3D integration of DRAM
Author :
Youngil Kim ; Yong Ho Song
Author_Institution :
Dept. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
The TSV-based 3D integration is a promising technique to improve the chip integration density and increase memory bandwidth. When memories dies are stacked, they are placed on top of a multi-core die. However, the heat dissipated by a die is propagated to neighboring dies and thus increase their temperature. The increased power density in a 3D integration often causes thermal issue to be critical. Therefore, analysis of thermal behavior for 3D integration is essential for solving thermal issue. In this paper, we present our analysis results of the thermal characteristic of various 3D integration techniques.
Keywords :
DRAM chips; thermal analysis; three-dimensional integrated circuits; DRAM; TSV-based 3D integration; chip integration density; memories dies; multicore die; power density; thermal behavior; thermal characteristic; thermal issue; Computer architecture; Heat sinks; Heating; Random access memory; Temperature; Thermal analysis; Three-dimensional displays; 3D IC; L2 cache; Microprocessor; Thermal analysis;
Conference_Titel :
Consumer Electronics (ISCE 2014), The 18th IEEE International Symposium on
Conference_Location :
JeJu Island
DOI :
10.1109/ISCE.2014.6884440
